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PDF HUFA75429D3S Data sheet ( Hoja de datos )
| Número de pieza | HUFA75429D3S | |
| Descripción | N-Channel UltraFET MOSFETs 60V/ 20A/ 25m | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2002
HUFA75429D3S
N-Channel UltraFET® MOSFETs
60V, 20A, 25mΩ
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET® process. This advanced pro-
cess technology achieves very low on-resistance per silicon
area, resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications where
power efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-volt-
age bus switches.
Applications
• Motor & Load Control
• Powertrain Management
Features
• 175°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V
DRAIN (FLANGE)
D
GATE
SOURCE
TO-252
G
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 125oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings
60
±20
20
4
Figure 4
312
125
0.83
-55 to 175
1.2
100
52
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
Rev. A
1 page  
Typical Characteristics TA = 25°C unless otherwise noted
1.2
ID = 250µA
3000
1000
1.1 CRSS = CGD
CISS = CGS + CGD
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
COSS ≅ CDS + CGD
100
50
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 12. Capacitance vs Drain to Source
Voltage
10
VDD = 30V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 20A
ID = 4A
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 14. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 15. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. A
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
FAST â
MICROWIRE
SILENT SWITCHER â
Bottomless
FASTr
OPTOLOGIC â
SMART START
CoolFET
FRFET
OPTOPLANAR SPM
CROSSVOLT
GlobalOptoisolator PACMAN
STAR*POWER
DenseTrench
GTO
POP
Stealth
DOME
HiSeC
Power247
SuperSOT-3
EcoSPARK
I2C
PowerTrench â
SuperSOT-6
E2CMOSTM
ISOPLANAR
QFET
SuperSOT-8
EnSignaTM
LittleFET
QS
SyncFET
FACT
MicroFET
QT Optoelectronics TinyLogic
FACT Quiet Series MicroPak
Quiet Series
TruTranslation
UHC
UltraFET â
VCX
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5
11 Page | ||
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