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PDF HUF75343P3 Data sheet ( Hoja de datos )
| Número de pieza | HUF75343P3 | |
| Descripción | 75A/ 55V/ 0.009 Ohm/ N-Channel UltraFET Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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HUF75343G3, HUF75343P3, HUF75343S3,
HUF75343S3S
Data Sheet
March 2003
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery
operated products.
Formerly developmental type TA75343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75343G3
TO-247
75343G
HUF75343P3
TO-220AB
75343P
HUF75343S3
TO-262AA
75343S
HUF75343S3S
TO-263AB
75343S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™
Models
- Thermal Impedance PSPICE™ and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2003 Fairchild Semiconductor Corporation
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1
1 page  
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S
Typical Performance Curves (Continued)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 75A
2.0
1.5
1.0
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.5
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.6
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
4000
3000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
2000
1000
COSS
CRSS
0
0 10 20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 75A
VDD = 30V
ID = 47A
ID = 18A
0
0 20 40 60 80 100
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2003 Fairchild Semiconductor Corporation
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF75343P3.PDF ] | |
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