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PDF 99016 Data sheet ( Hoja de datos )
| Número de pieza | 99016 | |
| Descripción | Military Silicon Power Rectifier | |
| Fabricantes | Microsemi Corporation | |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFK 60N55Q2
IXFX 60N55Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
VDSS = 550 V
ID25 = 60 A
RDS(on) = 88 mΩ
trr ≤ 250 ns
Symbol
VDSS
VDGR
V
GS
VGSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
550 V
550 V
±30 V
±40 V
60 A
240 A
60 A
75 mJ
4.0 J
20 V/ns
735
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6g
10 g
PLUS 247TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
550
2.0
V
4.5 V
±200 nA
50 µA
2 mA
88 mΩ
Features
z Double metal process for low gate
resistance
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2002 IXYS All rights reserved
DS98984(12/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 99016.PDF ] | |
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