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AD8022 Schematic ( PDF Datasheet ) - Analog Devices

Teilenummer AD8022
Beschreibung Low Noise Op Amp
Hersteller Analog Devices
Logo Analog Devices Logo 




Gesamt 17 Seiten
AD8022 Datasheet, Funktion
Data Sheet
FEATURES
Low power amplifiers provide low noise and low distortion,
ideal for xDSL modem receiver
Wide supply range: +5 V, ±2.5 V to ±12 V voltage supply
Low power consumption: 4.0 mA/Amp
Voltage feedback
Ease of Use
Lower total noise (insignificant input current noise
contribution compared to current feedback amps)
Low noise and distortion
2.5 nV/√Hz voltage noise @ 100 kHz
1.2 pA/√Hz current noise
MTPR < −66 dBc (G = +7)
SFDR 110 dB @ 200 kHz
High speed
130 MHz bandwidth (−3 dB), G = +1
Settling time to 0.1%, 68 ns
50 V/μs slew rate
High output swing: ±10.1 V on ±12 V supply
Low offset voltage, 1.5 mV typical
APPLICATIONS
Receiver for ADSL, VDSL, HDSL, and proprietary
xDSL systems
Low noise instrumentation front end
Ultrasound preamps
Active filters
16-bit ADC buffers
GENERAL DESCRIPTIONS
The AD8022 consists of two low noise, high speed, voltage
feedback amplifiers. Each amplifier consumes only 4.0 mA of
quiescent current, yet has only 2.5 nV/√Hz of voltage noise.
These dual amplifiers provide wideband, low distortion
performance, with high output current optimized for stability
when driving capacitive loads. Manufactured on ADI’s high
voltage generation of XFCB bipolar process, the AD8022
operates on a wide range of supply voltages. The AD8022 is
available in both an 8-lead MSOP and an 8-lead SOIC. Fast over
voltage recovery and wide bandwidth make the AD8022 ideal as
the receive channel front end to an ADSL, VDSL, or proprietary
xDSL transceiver design.
In an xDSL line interface circuit, the AD8022’s op amps can be
configured as the differential receiver from the line transformer
or as independent active filters.
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
Dual High Speed,
Low Noise Op Amp
AD8022
FUNCTIONAL BLOCK DIAGRAM
OUT1 1
–IN1 2
+IN1 3
–VS 4
AD8022
+
+
8 +VS
7 OUT2
6 –IN2
5 +IN2
Figure 1.
100
10
eN (nV/ Hz)
iN (pA/ Hz)
1
10 100 1k 10k 100k 1M
FREQUENCY (Hz)
Figure 2. Current and Voltage Noise vs. Frequency
10M
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2011 Analog Devices, Inc. All rights reserved.






AD8022 Datasheet, Funktion
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage (+VS to −VS)
Internal Power Dissipation1
8-Lead SOIC (R)
8-Lead MSOP (RM)
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
(A Grade)
Lead Temperature Range
(Soldering 10 sec)
Rating
26.4 V
1.6 W
1.2 W
±VS
±0.8 V
Observe Power Derating Curves
−65°C to +125°C
−40°C to +85°C
300°C
1 Specification is for the device in free air:
8-Lead SOIC: θJA = 160°C/W.
8-Lead MSOP: θJA = 200°C/W.
AD8022
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8022 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit may cause a shift in
parametric performance due to a change in the stresses exerted
on the die by the package. Exceeding a junction temperature of
175°C for an extended period can result in device failure.
While the AD8022 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the
maximum power derating curves.
2.0
TJ = 150°C
1.5
8-LEAD SOIC PACKAGE
1.0
8-LEAD MSOP
0.5
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. C | Page 5 of 16

6 Page









AD8022 pdf, datenblatt
Data Sheet
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
10k
–PSRR
+PSRR
100k
1M
FREQUENCY (Hz)
10M
100M
Figure 34. Power Supply Rejection vs. Frequency VS = ±2.5 V
0
–10
–20
–30
SIDE A OUT
–40
–50
–60
SIDE B OUT
–70
–80
–90
–100
10k
100k
1M
FREQUENCY (Hz)
10M
100M
Figure 35. Output-to-Output Crosstalk vs. Frequency, VS = ±12 V
AD8022
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
100k
SIDE A OUT
SIDE B OUT
1M 10M
FREQUENCY (Hz)
100M
Figure 36. Output-to-Output Crosstalk vs. Frequency, VS = ±2.5 V
100
31
10
3.16
1
0.316
0.1
0.0316
30k 100k
1M 10M
FREQUENCY (Hz)
100M
Figure 37. Output Impedance vs. Frequency, VS = ±12 V
500M
Rev. C | Page 11 of 16

12 Page





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