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1MBI200N-120 Schematic ( PDF Datasheet ) - Fuji Electric

Teilenummer 1MBI200N-120
Beschreibung IGBT MODULE
Hersteller Fuji Electric
Logo Fuji Electric Logo 




Gesamt 4 Seiten
1MBI200N-120 Datasheet, Funktion
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
200
400
200
400
1500
+150
-40 +125
A
W
°C
°C
Isolation Voltage
A.C. 1min.
Vis
Mounting *1
2500
3.5
V
Screw Torque
Terminals *2 4.5 Nm
Terminals *3
1.7
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 4.5 Nm (M6)
*3:Recommendable Value; 1.3 1.7 Nm (M4)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Test Conditions
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=200mA
VGE=15V IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=200A
VGE=± 15V
RG=4.7
IF=200A VGE=0V
IF=200A
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
32000
11600
10320
0.65
0.25
0.85
0.35
Max.
4.0
60
7.5
3.3
1.2
0.6
1.5
0.5
3.0
350
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.0125
Max.
0.085
0.22
Units
°C/W





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