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AT49BV1604-11UI Schematic ( PDF Datasheet ) - ATMEL Corporation

Teilenummer AT49BV1604-11UI
Beschreibung 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Hersteller ATMEL Corporation
Logo ATMEL Corporation Logo 




Gesamt 18 Seiten
AT49BV1604-11UI Datasheet, Funktion
Features
2.7V to 3.3V Read/Write
Access Time - 90 ns
Sector Erase Architecture
– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
– Two 16K Word (32K Byte) Sectors with Individual Write Lockout
Fast Word Program Time - 20 µs
Fast Sector Erase Time - 200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
– 25 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
Optional VPP Pin for Fast Programming
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP, CBGA, and µBGA Package Options
Top or Bottom Boot Block Configuration Available
Description
The AT49BV16X4(T) is 2.7- to 3.3-volt 16-megabit Flash memory organized as
1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 40 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball
µBGA packages. The device has CE, and OE control signals to avoid any bus
(continued)
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
VCCQ
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Optional Power Supply for Faster
Program/Erase Operations
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Output Power Supply
Don’t Connect
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604
AT49BV1604T
AT49BV1614
AT49BV1614T
Rev. 0925H–08/99
1






AT49BV1604-11UI Datasheet, Funktion
Command Definition in Hex(1)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
Addr Data
2nd Bus
Cycle
Addr Data
3rd Bus
Cycle
Addr Data
4th Bus
Cycle
Addr Data
5th Bus
Cycle
Addr Data
6th Bus
Cycle
Addr Data
Read
Chip Erase
Sector Erase
1 Addr DOUT
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA(3)(4) 30
Byte/Word Program 4 5555 AA 2AAA 55 5555 A0 Addr DIN
Bypass Unlock
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 A0
Single Pulse
Byte/Word Program
1
Addr DIN
Sector Lockout
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA(3)(4) 40
Erase Suspend
Erase Resume
1 xxxx B0
1
PA(5)
30
Product ID Entry
3 5555 AA 2AAA 55 5555 90
Product ID Exit(2)
3 5555 AA 2AAA 55 5555 F0
Product ID Exit(2)
1 xxxx F0
Notes:
1. The DATA FORMAT in each bus cycle is as follows: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex).
The ADDRESS FORMAT in each bus cycle is as follows: A15 - A0 (Hex), A-1, A14 - A19 (Don’t Care).
2. Either one of the Product ID Exit commands can be used.
3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see next two
pages for details).
4. When the sector programming lockout feature is not enabled, the sector will erase (from the same sector erase command).
Once the sector has been protected, data in the protected sectors cannot be changed unless the RESET pin is taken to
12V ± 0.5V.
5. PA is the plane address (A19 - A18).
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
6 AT49BV1604(T)/1614(T)

6 Page









AT49BV1604-11UI pdf, datenblatt
Program Cycle Characteristics
Symbol
tBP
tAS
tAH
tDS
tDH
tWP
tWPH
tEC
tSEC
Parameter
Byte/Word Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Chip Erase Cycle Time
Sector Erase Cycle Time
Program Cycle Waveforms
OE
Min Typ Max
20 50
0
100
100
10
100
50
10
200
PROGRAM CYCLE
CE
WE
A0 -A19
DATA
tWP tWPH
tAS tAH
tDH
5555
2AAA
tDS
AA 55
5555
ADDRESS
A0
INPUT
DATA
tBP
5555
AA
Units
µs
ns
ns
ns
ns
ns
ns
seconds
ms
Sector or Chip Erase Cycle Waveforms
OE (1)
CE
(4)
WE
A0-A19
DATA
tWP tWPH
(4)
tAS tAH
tDH
5555
2AAA
tDS
5555
5555
2AAA
Note 2
tEC
AA
WORD 0
55
WORD 1
80
WORD 2
AA
WORD 3
55
WORD 4
Note 3
WORD 5
Notes:
12
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased. (See
note 3 under command definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
4. The tWPH time between the 5th and 6th bus cycle should be a minimum of 150 ns.
AT49BV1604(T)/1614(T)

12 Page





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