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BCW29LT1 Schematic ( PDF Datasheet ) - Leshan Radio Company

Teilenummer BCW29LT1
Beschreibung General Purpose Transistors
Hersteller Leshan Radio Company
Logo Leshan Radio Company Logo 




Gesamt 6 Seiten
BCW29LT1 Datasheet, Funktion
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
IC
2
BASE
Value
–32
–32
–5.0
–100
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
BCW29LT1
BCW30LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0mAdc, IE = 0 )
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, V EB = 0)
Collector–Emitter Breakdown Voltage
(I C = –10 µAdc, I C = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0 )
(VCB = –32 Vdc, IE = 0, TA = 100°C)
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
–32
–32
–32
–5.0
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max Unit
— Vdc
— Vdc
— Vdc
— Vdc
–100
–10
nAdc
µAdc
M7–1/6






BCW29LT1 Datasheet, Funktion
LESHAN RADIO COMPANY, LTD.
BCW29LT1 BCW30LT1
1.0
0.7
0.5 D = 0.5
0.3
0.2 0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01
0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
FIGURE 19
P(pk)
t1
t2
DUTY CYCLE, D = t 1 / t 2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1 (SEE AN–569)
Z θJA(t) = r(t) • RθJA
T J(pk) – T A = P (pk) Z θJA(t)
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
t, TIME (ms)
Figure 17. Thermal Response
104
V CC = 30 V
103
102
I
CEO
101
100
10–1
I CBO
AND
I CEX @ V BE(off) = 3.0 V
10–2
–4
–2
0 +20 +40 +60 +80 +100 +120 +140 +160
T J , JUNCTION TEMPERATURE (°C)
Figure 18. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 19. Using the model and the device
thermal response the normalized effective transient thermal re-
sistance of Figure 17 was calculated for various duty cycles.
To find Z θJA(t) , multiply the value obtained from Figure 17 by
the steady state value R θJA .
Example:
The BCW29LT1 is dissipating 2.0 watts peak under the follow-
ing conditions:
t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
Using Figure 17at a pulse width of 1.0 ms and D = 0.2, the read-
ing of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
M7–6/6

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