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BF1203 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BF1203
Beschreibung Dual N-channel dual gate MOS-FET
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 20 Seiten
BF1203 Datasheet, Funktion
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1203
Dual N-channel dual gate
MOS-FET
Product specification
Supersedes data of 2000 Dec 04
2001 Apr 25






BF1203 Datasheet, Funktion
Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
25
handbook, halfpage
ID
(mA)
20
15
10
5
0
0 0.5
VG2-S = 4 V
MCD935
3.5 V
3V
2.5 V
2V
1.5 V
1V
1 1.5 2 2.5
VG1-S (V)
Amplifier a
VDS = 5 V.
Tj = 25 °C.
Fig.3 Transfer characteristics; typical values.
24
handbook, halfpage
ID
(mA)
16
8
MCD936
VG1-S = 1.8 V
1.7 V
1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
0
0 2 4 6 8 10
VDS (V)
Amplifier a
VG2-S = 4 V.
Tj = 25 °C.
Fig.4 Output characteristics; typical values.
100
handbook, halfpage
IG1
(µA)
80
VG2-S = 4 V
MCD937
3.5 V
3V
60
2.5 V
40
20
0
0 0.5
Amplifier a
VDS = 5 V.
Tj = 25 °C.
1 1.5
2V
1.5 V
2 2.5
VG1-S (V)
Fig.5 Gate 1 current as a function of gate 1
voltage; typical values.
2001 Apr 25
handbook,4h0alfpage
yfs
(mS)
30
MCD938
VG2-S = 4 V
3.5 V
20 3 V
2.5 V
10
2V
0
0
5
10 15
20 25
ID (mA)
Amplifier a
VDS = 5 V.
Tj = 25 °C.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
6

6 Page









BF1203 pdf, datenblatt
Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
20
handbook, halfpage
ID
(mA)
16
12
8
VG2-S = 4 V
3.5 V
3V
MCD952
2.5 V
2V
1.5 V
4
1V
0
0 0.4 0.8 1.2 1.6 2
VG1-S (V)
Amplifier b
VDS = 5 V.
Tj = 25 °C.
Fig.19 Transfer characteristics; typical values.
24
handbook, halfpage
ID
(mA)
16
8
MCD953
VG1-S = 1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1V
0.9 V
0
0 2 4 6 8 10
VDS (V)
Amplifier b
VG2-S = 4 V.
Tj = 25 °C.
Fig.20 Output characteristics; typical values.
100
handbook, halfpage
IG1
(µA)
80
VG2-S = 4 V
MCD954
3.5 V
3V
60
2.5 V
40
2V
20
0
0 0.5
Amplifier b
VDDSS = 5 V.
Tjj = 25 °C.
1 1.5
1.5 V
1V
2 2.5
VG1-S (V)
Fig.21 Gate 1 current as a function of gate 1
voltage; typical values.
2001 Apr 25
handbook,4h0alfpage
yfs
(mS)
30
MCD955
3.5 V
VG2-S = 4 V
3V
20
2.5 V
10
2V
0
04
8 12 16 20
ID (mA)
Amplifier b
VDS = 5 V.
Tj = 25 °C.
Fig.22 Forward transfer admittance as a function
of drain current; typical values.
12

12 Page





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