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Teilenummer | BF1109 |
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Beschreibung | N-channel dual-gate MOS-FETs | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 16 Seiten DISCRETE SEMICONDUCTORS
DATA SHEET
BF1109; BF1109R; BF1109WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1997 Sep 03
File under Discrete Semiconductors, SC07
1997 Dec 08
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1109; BF1109R; BF1109WR
handbook,1h6alfpage
ID
(mA)
12
MDA617
8
4
0
02
46
8 10
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of drain-source
voltage; typical values.
handbook,1h6alfpage
ID
(mA)
12
MDA618
8
4
0
−8 −6 −4 −2 IG1 (µA) 0
VDS = 9 V; VG2-S = 4 V; Tj = 25 °C.
Fig.10 Drain current as a function of gate 1 current;
typical values.
120
handbook, halfpage
Vunw
(dBµV)
110
MDA619
100
90
80
0
20 40 60
gain reduction (dB)
VDS = 9 V; VG2nom = 4 V; IDnom = 12 mA; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C.
Fig.11 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values (see Fig.18).
1997 Dec 08
6
6 Page Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1109; BF1109R; BF1109WR
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
DB
E AX
y
3
e
4
2
wM B
bp
e1
1
b1
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
v
wy
mm
1.1
0.8
0.1
0.4
0.3
0.7 0.25 2.2
0.5 0.10 1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
0.1
OUTLINE
VERSION
SOT343R
1997 Dec 08
IEC
REFERENCES
JEDEC
EIAJ
12
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ BF1109 Schematic.PDF ] |
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