BF1101WR Datasheet PDF - NXP Semiconductors
| Part Number | BF1101WR | |
| Description | N-channel dual-gate MOS-FETs | |
| Manufacturers | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook,2h0alfpage
ID
(mA)
16
12
8
MGS299
VG2-S = 4 V 3 V
3.5 V
2.5 V
2V
4 1.5 V
1V
0
0 0.4 0.8 1.2 1.6 2
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
4
0
0
MGS300
VG1-S = 1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1V
2468
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.6 Output characteristics; typical values.
handbook1,0h0alfpage
I G1
(µA)
80
MGS301
VG2-S = 4 V 3.5 V
3V
60
2.5 V
40
2V
20
0
0 0.5 1 1.5 2 2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
1999 May 14
handbook,4h0alfpage
yfs
(mS)
30
20
MGS302
VG2-S = 4 V
3.5 V
3V
2.5 V
10
2V
0
0 4 8 12 16 20
ID (mA)
VDS = 5 V.
Tj = 25 °C.
Fig.8 Forward transfer admittance as a
function of drain current; typical values.
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BF1101WR electronic component. |
| Information | Total 16 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BF1101WR.PDF Datasheet ] | |
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