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PDF BF1100R Data sheet ( Hoja de datos )
| Número de pieza | BF1100R | |
| Descripción | Dual-gate MOS-FETs | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1100; BF1100R
Dual-gate MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
1 page  
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance
input capacitance at gate 1
pulsed; Tj = 25 °C
VDS = 9 V
VDS = 12 V
f = 1 MHz
input capacitance at gate 2
VDS = 9 V
VDS = 12 V
f = 1 MHz
drain-source capacitance
VDS = 9 V
VDS = 12 V
f = 1 MHz
VDS = 9 V
VDS = 12 V
reverse transfer capacitance f = 1 MHz
noise figure
VDS = 9 V
VDS = 12 V
f = 800 MHz; GS = GSopt; BS = BSopt
VDS = 9 V
VDS = 12 V
24
24
−
−
−
−
−
−
−
−
−
−
TYP.
28
28
2.2
2.2
1.6
1.4
1.4
1.1
25
25
2
2
MAX.
33
33
2.6
2.6
−
−
1.8
1.5
35
35
2.8
2.8
UNIT
mS
mS
pF
pF
pF
pF
pF
pF
fF
fF
dB
dB
hagnadbinook, 0halfpage
reduction
(dB)
10
MLD157
20
30
40
50
01234
VAGC (V)
f = 50 MHz.
Tj = 25 °C.
Fig.5 Gain reduction as a function of the AGC
voltage; typical values.
1995 Apr 25
120
handbook, halfpage
Vunw
(dBµV)
110
100
MLD158
(1)
(2)
90
80
0 10 20 30 40 50
gain reduction (dB)
(1) RG = 250 kΩ to VGG = 12 V
(2) RG = 180 kΩ to VGG = 9 V
fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
Fig.6 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.27.
5
5 Page 
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
handbook, full pagewidth
VAGC
R1
10 k Ω
C1
4.7 nF
C3 12 pF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG
VGG
DUT
L1
≈ 450 nH
C4
RL
50 Ω
4.7 nF
V DS
MGC420
For VGG = VDS = 9 V, RG = 180 kΩ.
For VGG = VDS = 12 V, RG = 250 kΩ.
Fig.27 Cross-modulation test set-up.
1995 Apr 25
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BF1100R.PDF ] | |
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