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Teilenummer | BF1012 |
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Beschreibung | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | |
Hersteller | Siemens Semiconductor Group | |
Logo | ||
Gesamt 4 Seiten Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 12V
• Integrated stabilized bias network
BF 1012
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BF 1012
MYs
Q62702-F1487 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS ≤ 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
16
25
10
3
200
-55 ...+150
150
≤370
Unit
V
mA
V
mW
°C
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109998-1-1919-081
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ BF1012 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens Semiconductor Group |
BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |
BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise/ gain-controlled input stages up to 1 GHz) | Siemens Semiconductor Group |
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