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BF1012 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BF1012
Beschreibung Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
Hersteller Siemens Semiconductor Group
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Gesamt 4 Seiten
BF1012 Datasheet, Funktion
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 12V
Integrated stabilized bias network
BF 1012
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BF 1012
MYs
Q62702-F1487 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
16
25
10
3
200
-55 ...+150
150
370
Unit
V
mA
V
mW
°C
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109998-1-1919-081





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