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Teilenummer | BF1009SR |
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Beschreibung | Silicon N-Channel MOSFET Tetrode | |
Hersteller | Infineon Technologies AG | |
Logo | ||
Gesamt 5 Seiten BF1009S...
Silicon N_Channel MOSFET Tetrode
• For low noise, high gain controlled
input stage up to 1 GHz
• Operating voltage 9 V
• Integrated biasing network
AGC G2
HF G1
Input
Drain HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF1009S
BF1009SR
Package
SOT143
SOT143R
1=S
1=D
Pin Configuration
2=D 3=G2 4=G1 -
2=S 3=G1 4=G2 -
-
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ≤ 76 °C, BF1009S, BF1009SR
TS ≤ 94 °C, BF1009W
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
12
25
10
3
200
200
-55 ... 150
150
Marking
JLs
JLs
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 Feb-18-2004
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ BF1009SR Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | Siemens Semiconductor Group |
BF1009S | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1009SR | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1009SW | Silicon N-Channel MOSFET Tetrode | Infineon |
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