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PDF BF1009S Data sheet ( Hoja de datos )
| Número de pieza | BF1009S | |
| Descripción | Silicon N-Channel MOSFET Tetrode | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BF1009S (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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BF1009S...
Silicon N_Channel MOSFET Tetrode
• For low noise, high gain controlled
input stage up to 1 GHz
• Operating voltage 9 V
• Integrated biasing network
AGC G2
HF G1
Input
Drain HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF1009S
BF1009SR
Package
SOT143
SOT143R
1=S
1=D
Pin Configuration
2=D 3=G2 4=G1 -
2=S 3=G1 4=G2 -
-
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ≤ 76 °C, BF1009S, BF1009SR
TS ≤ 94 °C, BF1009W
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
12
25
10
3
200
200
-55 ... 150
150
Marking
JLs
JLs
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 Feb-18-2004
1 page  
BF1009S...
Forward transfer admittance
|Y21| = ƒ(VG2S)
Gate 1 input capacitance Cg1ss= ƒ(Vg2s)
f = 200MHz
28
mS
24
22
20
18
16
14
12
10
8
6
4
2
00 1 2 3 4 V 6
VG2S
3
pF
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
00 1 2 3 4 V 6
VG2S
Output capacitance Cdss = ƒ(VG2S)
f = 200MHz
3
pF
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
00 1 2 3 4 V 6
VG2S
5
Feb-18-2004
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BF1009S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BF1009 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |  Siemens Semiconductor Group |
| BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | Siemens Semiconductor Group |
| BF1009S | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
| BF1009SR | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
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