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BF1005R Schematic ( PDF Datasheet ) - Infineon Technologies AG

Teilenummer BF1005R
Beschreibung Silicon N-Channel MOSFET Tetrode
Hersteller Infineon Technologies AG
Logo Infineon Technologies AG Logo 




Gesamt 8 Seiten
BF1005R Datasheet, Funktion
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5V
Integrated biasing network
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BF1005...
AGC
RF
Input
Drain RF Output
G2 + DC
G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking
MZs
MZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
8
25
10
3
200
-55 ... 150
150
V
mA
V
mW
°C
1Pb-containing package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 2007-04-20






BF1005R Datasheet, Funktion
Package Outline
Foot Print
Package SOT143
BF1005...
2.9 ±0.1
1.9
B
43
1±0.1
0.1 MAX.
0.2
0.8
+0.1
-0.05
12
0.4
+0.1
-0.05
0.25 M B
1.7
0.08...0.15 A
0...8˚
0.2 M A
0.8 1.2 0.8
1.2 0.8
0.8
Marking Layout (Example)
RF s
Pin 1
Manufacturer
2005, June
Date code (YM)
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
Pin 1
3.15
6
1.15
2007-04-20

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