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PDF BGA420 Data sheet ( Hoja de datos )
| Número de pieza | BGA420 | |
| Descripción | Si-MMIC-Amplifier in SIEGET 25-Technologie | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BGA420 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BGA420
Si-MMIC-Amplifier in SIEGET 25-Technologie
Cascadable 50 -gain block
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz
IP3out = +13 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.7 mA)
Noise figure NF = 2.3 dB at 1.8 GHz
Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
3
4
2
1 VPS05605
VD
4
Circuit Diagram
3 OUT
1
IN
2
GND
EHA07385
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BGA420
BLs 1, IN 2, GND 3, OUT 4, VD SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
ID
VD
Ptot
PRFin
Tj
TA
Tstg
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
410
K/W
1 Jan-29-2002
1 page  
BGA420
Insertion power gain |S21|2 = f (f)
VD, ID = parameter
25
dB
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3,4mA
15
10
5
010 -1
10 0
Noise figure NF = f (f)
VD,ID = parameter
5
GHz
f
10 1
Insertion power gain |S21|2 = f (f)
VD = 3 V
TA = parameter
22
dB TA=-20°C
TA=+25°C
18 TA=+75°C
16
14
12
10
8
6
4
2
010 -1
10 0 GHz
f
10 1
Noise figure NF = f (f)
VD = 3V
TA = parameter
3.5
dB
VD=5V, ID=12.4mA
VD=3V, ID=6.4mA
3
dB TA=+75°C
TA=+25°C
TA=-20°C
2.5
2.0
1.5
2
1.0
1
0.5
010 -1
10 0
GHz
10 1
f
0.010 -1
5
10 0
GHz
10 1
f
Jan-29-2002
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BGA420.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BGA420 | Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 -gain block Unconditionally stable) |  Siemens Semiconductor Group |
| BGA420 | Si-MMIC-Amplifier in SIEGET 25-Technologie | Infineon Technologies AG |
| BGA425 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable) | Siemens Semiconductor Group |
| BGA427 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) | Siemens Semiconductor Group |
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