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Teilenummer | BGA310 |
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Beschreibung | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) | |
Hersteller | Siemens Semiconductor Group | |
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Gesamt 4 Seiten BGA 310
Silicon Bipolar MMIC-Amplifier
Preliminary data
• Cascadable 50 Ω-gain block
• 9 dB typical gain at 1.0 GHz
• 9 dBm typical P-1dB at 1.0 GHz
• 3 dB-bandwidth: DC to 2.4 GHz
RF IN 3
Circuit Diagram
4
1 RF OUT/Bias
3
2
1 VPS05178
Type Marking Ordering Code
BGA 310 BLs Q62702-G0041
2, 4 GND
EHA07312
Pin Configuration
1 RFout/bias 2 GND 3 RF input
Package
4 GND SOT-143
Maximum Ratings
Parameter
Device current
Total power dissipation, TS ≤ 99 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
ID
Ptot
PRFin
Tj
TA
Tstg
RthJS
Value
60
250
10
150
-65 ...+150
-65 ...+150
Unit
mA
mW
dBm
°C
≤ 205
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109498-1-1919-081
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ BGA310 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
BGA310 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) | Siemens Semiconductor Group |
BGA312 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) | Siemens Semiconductor Group |
BGA318 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | Siemens Semiconductor Group |
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