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Teilenummer | BG3130R |
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Beschreibung | DUAL N-Channel MOSFET Tetrode | |
Hersteller | Infineon Technologies AG | |
Logo | ||
Gesamt 10 Seiten DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BG3130...
4
5
6
3
2
1
BG3130
BG3130R
$#
*
)
"
!
AGC
RF
Input RG1
G2
G1
VGG
GND
Drain
RF Output
+ DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG3130
BG3130R
Package
SOT363
SOT363
Pin Configuration
1=G1* 2=G2 3=D* 4=D** 5=S
1=G1* 2=S 3=D* 4=D** 5=G2
Marking
6=G1** KAs
6=G1** KHs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1 2007-06-01
BG3130...
Gate 1 forward transconductance
gfs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A = amp. B
40
mS
30
25
20
4V
3.5V
3V
15 2.5V
10 2V
5
0
0 4 8 12 16 20 24 28 mA 36
ID
Drain current ID = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. A = amp. B
32
µA
24
20
4V
3V
2.5V
16
2V
12
8
1.5V
4
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2
VG1S
Drain current ID = ƒ(VGG) amp.A=amp.B
VDS = 5V, VG2S = 4V, RG1 = 120kΩ
(connected to VGG, VGG=gate1 supply voltage)
13
mA
11
10
9
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VGG
Drain current ID = ƒ(VGG)
VG2S = 4V, RG1 = Parameter in kΩ
amp. A = amp. B
22
mA
18
16
14
70
80
100
120
12
10
8
6
4
2
0
0 1 2 3 4 5V 7
VGG=VDS
6 2007-06-01
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ BG3130R Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
BG3130 | DUAL N-Channel MOSFET Tetrode | Infineon Technologies AG |
BG3130R | DUAL N-Channel MOSFET Tetrode | Infineon Technologies AG |
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