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PDF BS109 Data sheet ( Hoja de datos )

Número de pieza BS109
Descripción DMOS Transistors (N-Channel)
Fabricantes General Semiconductor 
Logotipo General Semiconductor Logotipo



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No Preview Available ! BS109 Hoja de datos, Descripción, Manual

BS109
DMOS Transistors (N-Channel)
TO-92
.181 (4.6)
.142 (3.6)
FEATURES
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
max..022 (0.55)
.098 (2.5)
DS
G
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Drain-Source Voltage
VDSS
400
Drain-Gate Voltage
VDGS
400
Gate-Source Voltage (pulsed)
VGS ±20
Drain Current (continuous) at Tamb = 25 °C
ID 120
Power Dissipation at Tamb = 25 °C
Ptot 8301)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
V
V
V
mA
mW
°C
°C
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0 V, IF = 400 mA, Tj = 25 °C
Symbol
IF
VF
Value
400
1.0
Unit
mA
V
4/98

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