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PDF BT136F-800F Data sheet ( Hoja de datos )
| Número de pieza | BT136F-800F | |
| Descripción | Triacs | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Triacs
Product specification
BT136F series
GENERAL DESCRIPTION
Glass passivated triacs in a full pack
plastic envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT136F-
BT136F-
BT136F-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
4
25
600
600F
600G
600
4
25
800
800F
800G
800
4
25
V
A
A
PINNING - SOT186
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Ths ≤ 92 ˚C
full sine wave; Tj = 125 ˚C prior
to surge; with reapplied VDRM(max)
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
MAX.
-600
6001
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
February 1996
1
Rev 1.100
1 page  
Philips Semiconductors
Triacs
Product specification
BT136F series
10 Zth j-hs (K/W)
BT136
with heatsink compound
without heatsink compound
unidirectional
1 bidirectional
0.1
P
D
tp
t
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
1000 dVcom/dt (V/us)
100
off-state dV/dt limit
BT136...G SERIES
BT136 SERIES
BT136...F SERIES
10
dIcom/dt = 5.1 3.9 3 2.3 1.8 1.4
A/ms
1
0 50 100
Tj / C
150
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
February 1996
5
Rev 1.100
5 Page | ||
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| PDF Descargar | [ Datasheet BT136F-800F.PDF ] | |
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