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BSS123 Schematic ( PDF Datasheet ) - Infineon Technologies AG

Teilenummer BSS123
Beschreibung SIPMOS Small-Signal-Transistor
Hersteller Infineon Technologies AG
Logo Infineon Technologies AG Logo 




Gesamt 8 Seiten
BSS123 Datasheet, Funktion
Rev. 1.0
SIPMOSSmall-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
BSS123
Product Summary
VDS
RDS(on)
ID
100
6
0.17
V
A
Gate
pin1
Drain
pin 3
SOT23
3
Source
pin 2
2
1 VPS05161
Type
BSS123
BSS123
Package
SOT23
SOT23
Ordering Code
Q62702-S512
Q67000-S245
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
SAs
SAs
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
ID puls
TA=25°C
Reverse diode dv/dt
dv/dt
IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
TA=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
0.17
0.14
0.68
6
±20
Class 1
0.36
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-12-10






BSS123 Datasheet, Funktion
Rev. 1.0
BSS123
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.17 A, VGS = 10 V
BSS123
24
20
18
16
14
12
10
8 98%
6
4
typ
2
0
-60 -20 20
60 100 °C
180
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
10 3
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS; ID =50µA
2.2
V
98%
1.8
1.6
1.4 typ.
1.2
1
2%
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
10 0 BSS123
pF A
10 2
Ciss
10 -1
Coss
10 1
Crss
10 0
0 4 8 12 16 20 24 28 V 36
VDS
Page 6
10 -2
10 -3
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6
2 2.4 V 3
VSD
2002-12-10

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