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PDF BSP320 Data sheet ( Hoja de datos )
| Número de pieza | BSP320 | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP320 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS® Small-Signal-Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
BSP 320S
VDS
RDS(on)
ID
60
0.12
2.9
V
Ω
A
4
Type
BSP320S
Package
SOT-223
Ordering Code
Q67000-S4001
Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Pulsed drain current
TA = 25 ˚C
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25 Ω
ID
IDpulse
EAS
Avalanche current,periodic limited by Tjmax
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
IAR
EAR
dv/dt
IS = 2.9 A, VDS = 20 V, di/dt = 200 A/µs,
Tjmax = 150 ˚C
Gate source voltage
Power dissipation
TA = 25 ˚C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj
Tstg
Pin 1
G
Pin 2/4
D
3
2
1 VPS05163
Pin 3
S
Value
2.9
11.6
60
2.9
0.18
6
Unit
A
mJ
A
mJ
kV/µs
±20
1.8
-55 ... +150
-55 ... +150
55/150/56
V
W
˚C
Data Sheet
1
05.99
1 page  
BSP 320S
Power Dissipation
Ptot = f (TA)
Drain current
ID = f (TA)
BSP320S
1.9
W
1.6
1.4
BSP320S
3.2
A
2.4
1.2 2.0
1.0
1.6
0.8
1.2
0.6
0.8
0.4
0.2 0.4
0.00 20 40 60 80 100 120 ˚C 160
Safe operating area
TA
ID = f ( VDS )
parameter : D = 0 , TA = 25 ˚C
10 2 BSP320S
0.00 20 40 60 80 100 120
Transient thermal impedance
ZthJA = f(tp)
parameter : D = tp/T
10 2 BSP320S
˚C 160
TA
A
10 1
/ID
= V DS
R DS(on)
K/W
tp = 130.0µs
10 1
10 0
10 -1
10
-2
10
-1
10 0
1 ms
10 ms
DC
10 1 V 10 2
VDS
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-2
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s
tp
10 4
Data Sheet
5
05.99
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP320.PDF ] | |
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