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PDF BSP317P Data sheet ( Hoja de datos )
| Número de pieza | BSP317P | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary data
SIPMOS Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Gate
pin1
BSP 317 P
Product Summary
VDS
RDS(on)
ID
-250
4
-0.43
V
Ω
A
SOT-223
Drain
pin 2/4
4
Source
pin 3
3
2
1 VPS05163
Type
Package
BSP 317 P SOT-223
Ordering Code Tape and Reel Information Marking
Q67042-S4167 -
BSP317P
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=-0.43A, VDS=-200V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-0.43
-0.34
-1.72
6
±20
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-07-17
1 page  
Preliminary data
BSP 317 P
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj =25°C, -VGS
1.6
10V
A 5V
4.4V
3.6V
3.2V
1.2 2.8V
2.4V
1 2.2V
0.8
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS; Tj =25°C, -VGS
10
Ω
2.2V
8 2.4V
2.8V
3.2V
7 3.6V
4.4V
6 5V
10V
5
4
0.6
3
0.4
2
0.2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
-VDS
0
0 0.2 0.4 0.6 0.8 1 1.2 A 1.6
-ID
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
1.6
A
1.2
1
0.8
0.6
0.4
0.2
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8 V 3.6
-VGS
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj =25°C
1.4
S
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 A 1.6
-ID
Page 5
2002-07-17
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP317P.PDF ] | |
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