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PDF BSP255 Data sheet ( Hoja de datos )
| Número de pieza | BSP255 | |
| Descripción | P-channel enhancement mode vertical D-MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BSP255
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1996 Jun 13
File under Discrete Semiconductors, SC07
1996 Aug 05
1 page  
Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSP255
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
Coss
Crss
Qg
Qgs
Qgd
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times (see Fig.11)
td(on)
tr
ton
td(off)
tf
toff
turn-on delay time
rise time
turn-on switching time
turn-off delay time
fall time
turn-off switching time
Source-drain diode
VSD source-drain forward voltage
CONDITIONS
VGS = 0; ID = −10 µA
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −240 V
VGS = ±20 V; VDS = 0
VGS = −10 V; ID = −160 mA
VGS = −4.5 V; ID = −80 mA
VGS = −2.8 V; ID = −50 mA
VGS = 0; VDS = −50 V; f = 1 MHz
VGS = 0; VDS = −50 V; f = 1 MHz
VGS = 0; VDS = −50 V; f = 1 MHz
VGS = −10 V; VDD = −50 V;
ID = −160 mA; Tamb = 25 °C
VGS = −10 V; VDD = −50 V;
ID = −160 mA; Tamb = 25 °C
VGS = −10 V; VDD = −50 V;
ID = −160 mA; Tamb = 25 °C
MIN.
−300
−0.8
−
−
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
45
15
3
2.3
0.1
0.7
MAX.
−
−2
−100
±100
17
20
25
−
−
−
−
−
−
UNIT
V
V
nA
nA
Ω
Ω
Ω
pF
pF
pF
nC
nC
nC
VGS = 0 to −10 V; VDD = −50 V;
ID = −160 mA; Rgen = 50 Ω
VGS = −10 to 0 V; VDD = −50 V;
ID = −160 mA; Rgen = 50 Ω
−
−
−
−
−
−
2.4 −
1.6 −
4−
13 −
12 −
25 −
ns
ns
ns
ns
ns
ns
VGD = 0; IS = −0.5 A
− − −1.8 V
1996 Aug 05
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSP255.PDF ] | |
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