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PDF BSP16 Data sheet ( Hoja de datos )
| Número de pieza | BSP16 | |
| Descripción | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 AUGUST 1995
FEATURES
* High VCEO
* Low saturation voltage
BSP16
C
COMPLEMENTARY TYPE: BSP19
PARTMARKING DETAIL: BSP16
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
VALUE
-350
-300
-6
-1
-0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -350
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -300
V IC=-10mA
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V IE=-100µA
Collector Cut-Off
Current
ICBO
-1 µA VCB=-280V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
IEBO
VCE(sat)
hFE
30
-20
- 2.0
-0.5
120
µA
V
V
VEB=-6V
IC=-50mA, IB=-5mA*
IC=-30mA, IB=-3mA*
IC=-50mA, VCE=-10V*
Transition Frequency
fT
15
MHz
IC=-10mA, VCE=-10V*
f = 30MHz
Output Capacitance
Cobo
15 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 59
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