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PDF BSM25GAL120DN2 Data sheet ( Hoja de datos )
| Número de pieza | BSM25GAL120DN2 | |
| Descripción | IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BSM 25 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 25 GAL 120 DN2
VCE IC
1200V 38A
Package
Ordering Code
HALF BRIDGE GAL 1 C67076-A2009-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
RTHJCDC
Vis
-
-
-
-
Values
1200
Unit
V
1200
± 20
38
25
A
76
50
200
+ 150
-55 ... + 150
≤ 0.6
≤1
≤ 0.8
2500
20
11
F
55 / 150 / 56
W
°C
K/W
Vac
mm
-
Semiconductor Group
1
Mar-29-1996
1 page  
BSM 25 GAL 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 190 g
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BSM25GAL120DN2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSM25GAL120DN2 | IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) | Siemens Semiconductor Group |
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