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PDF BSM111AR Data sheet ( Hoja de datos )
| Número de pieza | BSM111AR | |
| Descripción | SIMOPAC Module (Power module Single switch N channel Enhancement mode) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SIMOPAC® Module
VDS = 100 V
I D = 200 A
R DS(on) = 8.5 mΩ
q Power module
q Single switch
q N channel
q Enhancement mode
q Package with insulated metal base plate
q Package outline/Circuit diagram: 11)
BSM 111 AR
Type
BSM 111 AR
Ordering Code
C67076-S1013-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Continuous drain current, TC = 25 ˚C
Pulsed drain current, TC = 25 ˚C
Operating and storage temperature range
Power dissipation, TC = 25 ˚C
Thermal resistance
Chip-case
Insulation test voltage2), t = 1 min.
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VDS
VDGR
VGS
ID
ID puls
Tj, Tstg
Ptot
RthJC
Vis
–
–
–
–
Values
100
100
± 20
200
600
– 55 … + 150
700
≤ 0.18
2500
16
11
F
55/150/56
Unit
V
A
˚C
W
K/W
Vac
mm
–
1) See chapter Package Outline and Circuit Diagrams.
2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
24
03.96
1 page  
Continuous drain-source current
ID = f (TC),
parameter: VGS ≥ 10 V, T j = 150 ˚C
BSM 111 AR
Drain-source breakdown voltage
V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C)
Drain source on-state resistance
R =DS(on) f (Tj)
parameter: ID = 130 A; VGS = 10 V (spread)
Typical capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
28
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSM111AR.PDF ] | |
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