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Número de pieza | BUZ93 | |
Descripción | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ93 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! BUZ 93
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 93
VDS
600 V
ID
3.6 A
RDS(on)
2.5 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 3.3 A, VDD = 50 V, RGS = 25 Ω
L = 37 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1343-A2
Values
3.6
14.5
3.3
6
Unit
A
mJ
220
± 20
80
-55 ... + 150
-55 ... + 150
≤ 1.56
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 page BUZ 93
Power dissipation
Ptot = ƒ(TC)
90
W
Ptot 70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
A
I
D
10 1
tp = 32.0µs
100 µs
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
3.8
A
3.2
ID
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
10 0
Z
thJC
10 -1
10 0
10 -1
10 0
10 1
1 ms
10 ms
DC
10 2 V 10 3
VDS
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BUZ93.PDF ] |
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