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BUZ91 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BUZ91
Beschreibung SIPMOS Power Transistor(N Channel)
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 9 Seiten
BUZ91 Datasheet, Funktion
SIPMOS ® Power Transistor
BUZ 91
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 91
VDS
600 V
ID
8.5 A
RDS(on)
0.8
Maximum Ratings
Parameter
Continuous drain current
TC = 32 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 8 A, VDD = 50 V, RGS = 25
L = 16.3 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1342-A2
Values
8.5
34
8
13
Unit
A
mJ
570
± 20
150
-55 ... + 150
-55 ... + 150
0.83
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96






BUZ91 Datasheet, Funktion
BUZ 91
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
19
A
Ptot = 150W
l
k
j
i
hg
f
e
16
ID
14
12
10
8
6
4
dVGS [V]
a 4.0
b 4.5
c 5.0
d 5.5
c e 6.0
f 6.5
g 7.0
h 7.5
i 8.0
j 9.0
b k 10.0
l 20.0
2a
0
0 4 8 12 16 20 24 28 32 V 40
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
10
A
ID 8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
2.6
2.2
RDS (on) 2.0
a
bc
1.8
1.6
1.4
1.2 d
1.0 e
0.8
f
h
j
g
i
k
0.6
0.4 VGS [V] =
0.2
abcdef
4.05 5.0 5.5 6.0 6.5 7.0
0.0
ghi j k
7.5 8.0 9.0 10.0 20.0
0 2 4 6 8 10 12 14 A 18
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
12
S
10
gfs
9
8
7
6
5
4
3
2
1
0
0123456 7A9
ID
Semiconductor Group
6
07/96

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