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BUZ311 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BUZ311
Beschreibung SIPMOS Power Transistor (N channel Enhancement mode)
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 9 Seiten
BUZ311 Datasheet, Funktion
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
BUZ 311
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 311
VDS
ID
1000 V 2.5 A
RDS(on)
5
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Ordering Code
C67078-A3102-A2
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
1000
Unit
V
1000
2.5
A
10
± 20
V
W
78
-55 ... ...+ 150 °C
-55 ... ...+ 150
1.6
K/W
75
C
55 / 150 / 56
Semiconductor Group
1
07/96






BUZ311 Datasheet, Funktion
BUZ 311
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
6.0
Ptot = 78W
A
5.0
ID
4.5
l kj i h
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 10 20 30 40
VGS [V]
g a 4.0
b 4.5
c 5.0
f
d 5.5
e 6.0
e f 6.5
g 7.0
h 7.5
d
i 8.0
j 9.0
k 10.0
l
c
20.0
b
a
50 V 65
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
3.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
16
a
RDS (on)
12
b
cde
f
10
8
g
h
6
i
j
4k
2 VGS [V] =
abc
4.05 5.0 5.5
0
0.0 1.0
def g
6.0 6.5 7.0 7.5
2.0 3.0
hi j k
8.0 9.0 10.0 20.0
4.0 A
ID
5.5
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
2.0
A
ID
2.0
gfs
S
1.5 1.0
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.5
0.0
0.0 0.5 1.0 1.5 2.0
A 3.0
ID
07/96

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