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Teilenummer | BUZ21L |
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Beschreibung | SIPMOS Power Transistor | |
Hersteller | Infineon Technologies AG | |
Logo | ||
Gesamt 8 Seiten SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
BUZ 21L
Type
BUZ 21 L
VDS
100 V
ID
21 A
RDS(on)
0.085 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 21 A, VDD = 25 V, RGS = 25 Ω
L = 340 µH, Tj = 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1338-A2
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
21
84
21
11.5
Unit
A
mJ
100
± 20
Class 1
75
-55 ... + 150
-55 ... + 150
≤ 1.67
75
E
55 / 150 / 56
V
W
˚C
K/W
Data Sheet
1
05.99
BUZ 21L
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 ˚C
50
Ptot = 75W
A
ID 40
35
30
25
20
15
lk j i
gh
f
VGS [V]
a 3.0
b 3.5
e
c 4.0
d 4.5
e 5.0
f 5.5
d g 6.0
h 6.5
i 7.0
c j 8.0
k 9.0
l 10.0
10
b
5
a
0
0.0 1.0 2.0 3.0 4.0 5.0 V 7.0
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 ˚C
0.26
a
Ω
bc
d
0.22
RDS (on)0.20
0.18
0.16
0.14
0.12
0.10
0.08
e
g
f
0.06
0.04 VGS [V] =
0.02
abcdef
3.05 4.0 4.5 5.0 5.5 6.0
ghi j
6.5 7.0 8.0 9.0
h
i
k
j
k
10.0
0.00
0 4 8 12 16 20 24 28 32 A 40
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
20
S
gfs 16
14
12
10
8
6
4
2
0
0 10 20 30 40 A 60
ID
Data Sheet
6
05.99
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ BUZ21L Schematic.PDF ] |
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