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BUZ12AL Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BUZ12AL
Beschreibung SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 9 Seiten
BUZ12AL Datasheet, Funktion
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
BUZ 12 AL
Not for new design
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 12 AL
VDS
50 V
ID
42 A
RDS(on)
0.035
Maximum Ratings
Parameter
Continuous drain current
TC = 44 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 42 A, VDD = 25 V, RGS = 25
L = 23.2 µH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Vgs
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1331-A3
Values
42
168
42
2.5
Unit
A
mJ
41
± 14
± 20
125
-55 ... + 150
-55 ... + 150
1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96






BUZ12AL Datasheet, Funktion
BUZ 12 AL
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
100
Ptot = 125W
A
ID 80
70
lkji h g f
e
60
50
40
30
20
10
0
0.0 1.0 2.0 3.0 4.0
VGS [V]
a 2.5
b 3.0
d c 3.5
d 4.0
e 4.5
f 5.0
g 5.5
c h 6.0
i 7.0
j 8.0
b k 9.0
l 10.0
a
V 6.0
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.11
a
bc
d
0.09
RDS (on)
0.08
0.07
0.06
0.05
0.04
0.03
e
f
g
ik
h
jl
0.02
VGS [V] =
0.01 a b c d e f
2.5 3.0 3.5 4.0 4.5 5.0
0.00
ghi j
5.5 6.0 7.0 8.0
kl
9.0 10.0
0 10 20 30 40 50 60 A 80
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
70
A
60
ID 55
50
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
40
S
gfs
30
25
20
15
10
5
0
0 10 20 30 40 50 A 65
ID
Semiconductor Group
6
07/96

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