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Teilenummer | BUZ11A |
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Beschreibung | N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET | |
Hersteller | STMicroelectronics | |
Logo | ||
Gesamt 8 Seiten ® BUZ11A
N - CHANNEL 50V - 0.045Ω - 26A TO-220
STripFET™ MOSFET
TYPE
VDSS
RDS(on)
ID
BUZ11A
50 V < 0.055 Ω 26 A
s TYPICAL RDS(on) = 0.045 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
IDM Drain Current (pulsed)
Ptot T otal Dissipat ion at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
DIN HUMIDITY CATEGORY (DIN 40040)
IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1)
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
Va l u e
50
50
± 20
26
104
75
-65 to 175
175
E
55/ 15 0/ 56
Un it
V
V
V
A
A
W
oC
oC
1/8
BUZ11A
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ BUZ11A Schematic.PDF ] |
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