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PDF BUZ110S Data sheet ( Hoja de datos )
| Número de pieza | BUZ110S | |
| Descripción | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ110S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 110 S
VDS
55 V
ID
80 A
BUZ 110 S
SPP80N05
Pin 1
G
Pin 2
D
Pin 3
S
RDS(on)
0.012 Ω
Package
TO-220 AB
Ordering Code
Q67040-S4005-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
L = 144 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
80
66
320
460
80
20
6
± 20
200
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
28/Jan/1998
1 page  
BUZ 110 S
SPP80N05
Power dissipation
Ptot = ƒ(TC)
220
W
180
Ptot
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0, TC = 25°C
10 3
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
90
A
ID 70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
A
I
D
10 2
tp = 8.7µs
10 µs
K/W
Z
thJC 10 -1
100 µs
10 -2
D = 0.50
0.20
10 1
1 ms
0.10
10 ms
DC
10 -3
single pulse
0.05
0.02
0.01
10 0
10 0
10 1 V 10 2
VDS
10 -4
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
28/Jan/1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUZ110S.PDF ] | |
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