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BUZ104 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BUZ104
Beschreibung SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 9 Seiten
BUZ104 Datasheet, Funktion
BUZ 104
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 104
VDS
50 V
ID
17.5 A
RDS(on)
0.1
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 17.5 A, VDD = 25 V, RGS = 25
L = 114 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1353-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
17.5
Unit
A
70
mJ
35
kV/µs
6
± 20
60
-55 ... + 175
-55 ... + 175
2.5
75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96






BUZ104 Datasheet, Funktion
BUZ 104
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
40
Ptot = 60W
l
A kj
ID 32
28
24
20
16
12
8
VGS [V]
a 4.0
b 4.5
i
c 5.0
d 5.5
h
e 6.0
g f 6.5
g 7.0
f h 7.5
i 8.0
e j 9.0
k 10.0
d l 20.0
c
4b
0a
0.0 1.0 2.0 3.0 4.0
V 6.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
40
A
ID
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.32
abc d e f g h
RDS (on)
0.24
0.20
0.16
0.12
0.08
i
j
k
0.04 VGS [V] =
abc def
4.05 5.0 5.5 6.0 6.5 7.0
0.00
ghi j k
7.5 8.0 9.0 10.0 20.0
0 4 8 12 16 20 24 A 32
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
10
S
gfs 8
7
6
5
4
3
2
1
0
0
5 10 15 20 25 A 35
ID
Semiconductor Group
6
07/96

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