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BUZ103SL-4 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BUZ103SL-4
Beschreibung SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 8 Seiten
BUZ103SL-4 Datasheet, Funktion
SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 103SL-4
Type
VDS
BUZ 103SL-4 55 V
ID
4.8 A
RDS(on)
0.055
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 4.8 A, VDD = 25 V, RGS = 25
L = 12 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
4.8
Unit
A
19.2
mJ
140
kV/µs
6
± 14
2.4
-55 ... + 175
-55 ... + 175
55 / 175 / 56
V
W
°C
Semiconductor Group
1
05/Sep/1997






BUZ103SL-4 Datasheet, Funktion
Preliminary data
BUZ 103SL-4
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
11
A
Plkjihgtfoet = 2W
ID 9
8
7
6
5
4
3
2
d
VGS [V]
a 2.0
b 2.5
c 3.0
d 3.5
e 4.0
f 4.5
g 5.0
h 5.5
i
cj
6.0
7.0
k 8.0
l 10.0
1
b
0a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.17
0.14
RDS (on)
0.12
a
b
0.10
0.08
0.06
0.04
c
d
j
e
g hi
f
0.02
0.00
VGS [V] =
ab
23.05 3.5
c
4.0
02
def g
4.5 5.0 5.5 6.0
46
hi j
7.0 8.0 10.0
8A
ID
11
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
90
A
ID 70
60
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
05/Sep/1997

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