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BUZ101L Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BUZ101L
Beschreibung SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 9 Seiten
BUZ101L Datasheet, Funktion
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 101L
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 101L
VDS
50 V
ID
29 A
RDS(on)
0.06
Package
TO-220 AB
Ordering Code
C67078-S1355-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 29 A, VDD = 25 V, RGS = 25
L = 83 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
29
116
70
6
± 14
± 20
100
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96






BUZ101L Datasheet, Funktion
BUZ 101L
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
65
Ptot = 100W
A
k lj i
55
ID 50
45
40
35
30
25
20
15
hVGS [V]
a 2.0
b 2.5
gc
d
3.0
3.5
e 4.0
f f 4.5
g 5.0
h
e
i
5.5
6.0
j 7.0
k 8.0
d
l 10.0
10 c
5b
0a
0.0 1.0 2.0 3.0 4.0 V 6.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
40
A
ID
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 14.5 A, VGS = 5 V
0.17
0.14
RDS (on)
0.12
0.10
0.08 98%
0.06 typ
0.04
0.02
0.00
-60 -20 20 60 100 °C 180
Tj
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
20
S
gfs 16
14
12
10
8
6
4
2
0
0 4 8 12 16 20 24 A 30
ID
Semiconductor Group
6
07/96

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