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BUZ100SL-4 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer BUZ100SL-4
Beschreibung SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 8 Seiten
BUZ100SL-4 Datasheet, Funktion
SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 100SL-4
Type
VDS
BUZ 100SL-4 55 V
ID
7.4 A
RDS(on)
0.023
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 7.4 A, VDD = 25 V, RGS = 25
L = 13.8 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
7.4
Unit
A
29.6
mJ
380
kV/µs
6
± 14
2.4
-55 ... + 175
-55 ... + 175
55 / 175 / 56
V
W
°C
Semiconductor Group
1
01/Oct/1997






BUZ100SL-4 Datasheet, Funktion
Preliminary data
BUZ 100SL-4
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
17 lkjhPtot = 2W
A igfed
14
ID
12
10
8
6
4
VGS [V]
a
c
b
2.5
3.0
c 3.5
d 4.0
e 4.5
f 5.0
g 5.5
h 6.0
i 6.5
j 7.0
k 8.0
b l 10.0
2
0a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.070
a
0.060
RDS (o0n).055
0.050
0.045
0.040
0.035
0.030
b
0.025
0.020
0.015
0.010 VGS [V] =
ab
0.005 32.50 4.0
0.000
02
cd
4.5 5.0
4
ef g
5.5 6.0 6.5
68
c
d
ihjgf e
hi j
7.0 8.0 10.0
10 12 A 15
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
90
A
ID 70
60
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
01/Oct/1997

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