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PDF BUV60 Data sheet ( Hoja de datos )
| Número de pieza | BUV60 | |
| Descripción | SWITCHMODE Series NPN Silicon Power Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
SWITCHMODEt Series
NPN Silicon Power Transistor
. . . designed for high speed, high current, high power applications.
• High DC current gain:
hFE min = 20 at IC = 25 A
= 10 at IC = 50 A
• Low VCE(sat):
VCE(sat) max. = 0.6 V at IC = 25 A
= 0.9 V at IC = 50 A
• Very fast switching times:
TF = 0.25 µs at IC = 50 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emititer Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage (VBE =
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΖ1.5 V)
Symbol
VCEO(sus)
VCBO
VEBO
VCEX
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter voltage (RBE =
100 Ω)
VCER
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(PWv
10 ms)
IC
ICM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Current continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC =
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ25_C
IB
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCase
θJC
BUV20
BUV60
125
160 260
7
160 260
150 260
50
60
10
250
–65 to 200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
Watts
_C
BUV20
BUV60
0.7
Unit
_C/W
1.0
0.8
0.6
0.4
0.2
BUV20
BUV60
50 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
125 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
0
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 10
40 80 120 160
TC, TEMPERATURE (°C)
Figure 1. Power Derating
1
200
Publication Order Number:
BUV20/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BUV60.PDF ] | |
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