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Número de pieza | BUT12XI | |
Descripción | Silicon Diffused Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT12XI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially
suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
ICsat Collector saturation current
tf Inductive fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 5.0 A;IB = 0.86 A
ICon = 5.0A;IBon = 1.0A,Tj ≤100˚C
TYP.
-
-
-
-
-
-
MAX.
1000
450
8
20
33
1.5
UNIT
V
V
A
A
W
V
5 -A
- 300 ns
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
8
20
4
6
33
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
3.65
-
UNIT
K/W
K/W
June 1997
1
Rev 1.000
1 page Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT12XI
IC / A
100
ICMmax
10
ICmax
1
II
I
0.1
DC
0.01
1
10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Tmb = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
h FE
100
5V
10 1V
Tj = 25 C
Tj = 125 C
1
0.01
0.1
IC / A
1
10
Fig.14. Typical DC current gain. hFE = f(IC)
parameter VCE
IC / A
8
7
6
5
4
3
2
1
0
0
200 400 600 800 1000
VCE / V
Fig.15. Reverse bias safe operating area. Tj ≤ Tj max
Zth / (K/W)
1E+01
BUX100
1E+00
1E-01
1.0
0.5
0.2
0.1
0.05
0.02
PD t p
D=
tp
T
1E-02
D=0
Tt
1E-05
1E-03
t/s
1E-01
1E+01
Fig.16. Transient thermal impedance. Zth j-mb = f(t); parameter D= tp/T
June 1997
5
Rev 1.000
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BUT12XI.PDF ] |
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