(PDF) BYS11-90 Datasheet - Schottky Barrier Rectifier ( Diode )

Número de pieza	BYS11-90
Descripción	Schottky Barrier Rectifier ( Diode )
Fabricantes	Vishay Siliconix
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Hay una vista previa y un enlace de descarga de BYS11-90 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! Schottky Barrier Rectifier Features D High efficiency D Low power losses D Very low switching losses D Low reverse current D High surge capability Applications Polarity protection Low voltage, high frequency rectifiers BYS11–90 Vishay Semiconductors 15 811 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage= Repetitive peak reverse voltage Peak forward surge current Average forward current tp=10ms, half sinewave Junction and storage temperature range Type Symbol VR= VRRM IFSM IFAV Tj=Tstg Value 90 30 1.5 –55...+150 Unit V A A °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction lead Junction ambient TL=constant mounted on epoxy–glass hard tissue mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA Value 25 150 125 100 Unit K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Forward voltage Reverse current IF=1A VR=VRRM VR=VRRM, Tj=100°C Type Symbol Min Typ Max Unit VF 750 mV 100 mA IR 1 mA Document Number 86014 Rev. 3, 08-Sep-00 www.vishay.com 1 (4) 1 page

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PDF Descargar	[ Datasheet BYS11-90.PDF ]

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PDF BYS11-90 Data sheet ( Hoja de datos )