|
|
PDF BYQ30EB-100 Data sheet ( Hoja de datos )
| Número de pieza | BYQ30EB-100 | |
| Descripción | Rectifier diodes ultrafast/ rugged | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BYQ30EB-100 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ30EB series
GENERAL DESCRIPTION
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope suitable for surface
mounting, featuring low forward
voltage drop, ultra-fast recovery
times and soft recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VRRM
VF
IO(AV)
trr
IRRM
BYQ30EB-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
MAX.
100
100
0.95
16
25
0.2
MAX.
150
150
0.95
16
25
0.2
MAX.
200
200
0.95
16
25
0.2
UNIT
V
V
A
ns
A
PINNING - SOT404
PIN DESCRIPTION
1 no connection
2 cathode
3 anode
mb cathode
PIN CONFIGURATION
mb
2
13
SYMBOL
k
tab
a
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)1
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I2t for fusing
Repetitive peak reverse current
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
square wave
δ = 0.5; Tmb ≤ 104 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 104 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
t = 10 ms
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
16
23
16
100
110
50
0.2
0.2
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A2s
A
A
˚C
˚C
1 Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000
1 page  
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Product specification
BYQ30EB series
10.3 max
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.12. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
Notes
1. Plastic meets UL94 V0 at 1/8".
5.08
Fig.13. SOT404 : minimum pad sizes for surface mounting.
October 1997
5
Rev 1.000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BYQ30EB-100.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BYQ30EB-100 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |