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PDF BYQ28X-200 Data sheet ( Hoja de datos )
| Número de pieza | BYQ28X-200 | |
| Descripción | Dual ultrafast rugged rectifier diode | |
| Fabricantes | NXP Semiconductors | |
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BYQ28X-200
Dual ultrafast rugged rectifier diode
Rev. 02 — 5 February 2009
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package.
1.2 Features and benefits
Fast switching
Guaranteed ESD capability
High thermal cycling performance
Low on-state losses
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VRRM
repetitive peak
reverse voltage
IO(AV)
average output
current
IFRM
repetitive peak
forward current
Dynamic characteristics
trr reverse recovery
time
Static characteristics
VF forward voltage
Electrostatic discharge
VESD
electrostatic
discharge voltage
Conditions
SQW; δ = 0.5; Th ≤ 92 °C;
both diodes conducting; see
Figure 1; see Figure 2
SQW; δ = 0.5; tp = 25 µs;
Th ≤ 92 °C; per diode
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery;
see Figure 5
IF = 5 A; Tj = 150 °C; see
Figure 4
HBM; C = 250 pF;
R = 1.5 kΩ; all pins
Min Typ Max Unit
- - 200 V
- - 10 A
- - 10 A
- 15 25 ns
- 0.8 0.895 V
- - 8 kV
1 page  
NXP Semiconductors
BYQ28X-200
Dual ultrafast rugged rectifier diode
7. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
Qr recovered charge
trr reverse recovery time
IRM
VFRM
peak reverse recovery
current
peak forward recovery
voltage
Conditions
IF = 10 A; Tj = 25 °C
IF = 5 A; Tj = 150 °C; see Figure 4
IF = 5 A; Tj = 25 °C
VR = 200 V; Tj = 25 °C
VR = 200 V; Tj = 100 °C
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
ramp recovery; Tj = 25 °C; see Figure 5
IF = 0.5 A; IR = 1 A; step recovery;
measured at IR = 0.25 A; Tj = 25 °C; see
Figure 6
IF = 5 A; VR ≥ 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; see Figure 5
IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C; see
Figure 7
Min Typ Max Unit
- 1.1 1.25 V
- 0.8 0.895 V
- 0.95 1.1 V
- 2 10 µA
- 0.1 0.2 mA
- 4 9 µC
- 15 25 ns
- - 20 ns
- 0.5 0.7 A
- 1- V
15
IF
(A)
10
5
0
0
001aag978
(1) (2) (3)
0.5 1.0 1.5
VF (V)
IF
dlF
dt
trr
time
25 %
Qr 100 %
IR IRM
003aac562
Fig 5. Reverse recovery definitions; ramp recovery
Fig 4. Forward current as a function of forward
voltage
BYQ28X-200_2
Product data sheet
Rev. 02 — 5 February 2009
© NXP B.V. 2009. All rights reserved.
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