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PDF BYP35A4 Data sheet ( Hoja de datos )
| Número de pieza | BYP35A4 | |
| Descripción | Silicon Press-Fit-Diodes | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
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Silicon Press-Fit-Diodes
High-temperature diodes
BYP 35A05 ... BYP 35A6
BYP 35K05 ... BYP 35K6
Silizium-Einpreßdioden
Hochtemperaturdioden
Dimensions / Maße in mm
Nominal current – Nennstrom
35 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…600 V
Metal press-fit case with plastic cover
Metall-Einpreßgehäuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
10 g
Casting compound has UL classification 94V-0
Vergußmasse UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
Cathode
Repetitive peak reverse voltage
Periodische Spitzensperrspanng.
VRRM [V]
BYP 35A05
BYP 35K05
50
BYP 35A1
BYP 35K1
100
BYP 35A2
BYP 35K2
200
BYP 35A3
BYP 35K3
300
BYP 35A4
BYP 35K4
400
BYP 35A6
BYP 35K6
600
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
360
480
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150/C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing – Grenzlastintegral, t <10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Maximum pressure – Maximaler Einpreßdruck
1) Max. case temperature TC = 150/C – Max. Gehäusetemperatur TC = 150/C
78
IFAV 35 A
IFRM 110 A 1)
IFSM 360 / 400 A
i2t 660 A2s
Tj – 50...+215 /C
TS – 50...+215 /C
7 kN
28.02.2002
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BYP35A4.PDF ] | |
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| BYP35A2 | Silicon Press-Fit-Diodes | Diotec Semiconductor |
| BYP35A3 | Silicon Press-Fit-Diodes | Diotec Semiconductor |
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