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BZW03C75 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BZW03C75
Beschreibung Voltage regulator diodes
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 9 Seiten
BZW03C75 Datasheet, Funktion
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 May 14






BZW03C75 Datasheet, Funktion
Philips Semiconductors
Voltage regulator diodes
Product specification
BZW03 series
TYPE
NUMBER
BZW03-C180
BZW03-C200
BZW03-C220
BZW03-C240
BZW03-C270
BZW03-C300
BZW03-C330
BZW03-C360
BZW03-C390
BZW03-C430
BZW03-C470
BZW03-C510
REVERSE
BREAKDOWN
VOLTAGE
V(BR)R (V)
at Itest
MIN.
168
188
208
228
251
280
310
340
370
400
440
480
TEMPERATURE
COEFFICIENT
SZ (%/K) at Itest
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
TEST
CURRENT
CLAMPING
VOLTAGE
Itest
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
V(CL)R
(V)
MAX.
249
276
305
336
380
419
459
498
537
603
655
707
at IRSM
(A)
note 1
2.0
1.8
1.6
1.5
1.3
1.2
1.1
1.0
0.93
0.83
0.76
0.71
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
IR (µA)
MAX.
10
10
10
10
10
10
10
10
10
10
10
10
at VR
(V)
150
160
180
200
220
240
270
300
330
360
390
430
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.7.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25 K/W
75 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.6.
For more information please refer to the “General Part of associated Handbook”.
1996 May 14
6

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