Philips Semiconductors
Voltage regulator diodes
Product specification
BZV85 series
102
handbook, halfpage
IZSM
(A)
10
1
MBG802
(1)
(2)
10−1
1
10
VZnom (V)
102
(1) tp = 10 µs; half sinewave; Tamb = 25 °C.
(2) tp = 10 ms; half sinewave; Tamb = 25 °C.
Fig.3 Non-repetitive peak reverse current as a
function of the nominal working voltage.
handboo3k,0h0alfpage
IF
(mA)
200
100
MBG925
(1) (2)
0
0
0.5
VF (V)
1.0
(1) Tj = 200 °C.
(2) Tj = 25 °C.
Fig.4 Forward current as a function of forward
voltage; typical values.
10
handbook, halfpage
SZ
(mV/K)
5
0
−5
0
MBG926
10
9V1
8V2
7V5
6V8
3V6
3V9
25
6V2
5V6
5V1
4V7
4V3
IZ (mA)
50
BZV85-C3V6 to C10.
Tj = 25 to 150 °C.
For types above 7.5 V the temperature coefficient is independent
of current; see Table “Per type”.
Fig.5 Temperature coefficient as a function of
working current; typical values.
100
handbook, halfpage
SZ
(mV/K)
80
60
40
MBG800
(1)
(2)
(3)
20
0
1
IZ = IZtest; Tj = 25 to 150 °C.
(1) Maximum values.
(2) Typical values.
(3) Minimum values.
10
VZnom (V)
102
Fig.6 Temperature coefficient as a function of
nominal working voltage.
1999 May 11
6
