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PDF MCD224-20io1 Data sheet ( Hoja de datos )
| Número de pieza | MCD224-20io1 | |
| Descripción | High Voltage Thyristor / Diode Module | |
| Fabricantes | IXYS | |
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High Voltage Thyristor \ Diode Module
Phase leg
Part number
MCD224-20io1
MCD224-20io1
VRRM
I TAV
VT
= 2x 2000 V
= 250 A
= 1.03 V
3 1 5 42
Backside: isolated
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: Y1
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
1 page  
MCD224-20io1
Thyristor
8000
6000
ITSM
IFSM 4000
[A]
2000
50 Hz
80% V RRM
T VJ = 45 C
T VJ = 130 C
106
V = 0V
R
I2t
105
[A2s]
0
0.001
0.01 0.1
t [s]
1
Fig. 1 Surge overload current
IT(F)SM: crest value, t: duration
500
400
PT 300
[W] 200
100
DC
180 sin
120
60
30
104
1
2 3 4 5 6 7 8 10
t [ms]
Fig. 2 I2t versus time (1-10 ms)
R K/W
thK A
0.1
0.2
0.3
0.4
0.6
0.8
1
0
0 100 200 300 0 25 50 75 100
ITAVM, IFAVM [A]
TA [°C]
Fig. 4 Power dissipation versus onstate current and•
ambient temperature (per thyristor/diode)
2000
1500
PT
[W] 1000
500
Circuit
B6
3xMCC224
125 150
R K/W
thK A
0.03
0.05
0.08
0.1
0.15
0.2
0.3
400
350
300
ITAVM 250
200
[A]
150
DC
180 sin
120
60
30
100
50
0
0 2 5 5 0 7 5 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
10
1: IGT, TVJ = 130°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
2
1
6
5
4
IGD, TVJ = 130°C
0.1
10-3 10-2 10-1
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
100 101 102
Fig. 5 Gate trigger characteristics
100
TVJ = 25°C
10
tgd
[µs]
1
typ. limit
0
0 200 400 600 0 25 50 75 100 125 150
IdAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
0.1
01.001 100.10 10100 1001000
IG [A]
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCD224-20io1.PDF ] | |
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