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PDF MCD225-16io1 Data sheet ( Hoja de datos )
| Número de pieza | MCD225-16io1 | |
| Descripción | Thyristor / Diode Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Thyristor \ Diode Module
Phase leg
Part number
MCD225-16io1
3 1 5 42
MCD225-16io1
VRRM
I TAV
VT
= 2x 1600 V
= 220 A
= 1.18 V
Backside: isolated
Features / Advantages:
● International standard package
● Direct copper bonded Al2O3-ceramic
with copper base plate
● Planar passivated chip
● Isolation voltage 3600 V~
● Keyed gate/cathode twin pins
Applications:
● Motor control, softstarter
● Power converter
● Heat and temperature control for
industrial furnaces and chemical
processes
● Lighting control
● Solid state switches
Package: Y1
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e
1 page  
MCD225-16io1
Thyristor
8000
6000
ITSM
IFSM
4000
[A]
2000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
106
I2dt
105
[A2s]
TVJ = 45 °C
TVJ = 140 °C
400
300
ITAVM
IFAVM
200
[A]
100
DC
180 ° sin
120 °
60 °
30 °
0
0.001
0.01 0.1
t [s]
1
Fig. 1 Surge overload current
ITSM/FSM: Crest value, t: duration
104
1
t [ms]
Fig. 2 I2dt versus time
400
300
Ptot
200
[W]
100
DC
180 ° sin
120 °
60 °
30 °
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
10
0
0 100 200 300 0 25 50 75 100 125 150
ITAVM/FAVM [A]
TA [°C]
Fig. 4 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
0
0 25 50 75 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
10 1: IGT, TVJ = 140°C
2: IGT, T4 = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
12
6
5
4
IGD, TVJ = 140°C
0.1
10-3 10-2 10-1
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
100 101 102
IG [A]
Fig. 5 Gate voltage and current
2000
1500
Ptot
1000
[W]
500
Circuit
B6
3xMCC225
3xMCD225
RthKA K/W
0.03
0.05
0.08
0.1
0.15
0.2
0.3
100
tgd
10
[µs]
TVJ = 25°C
typ. limit
0
0 200 400 600 0 25 50 75 100 125 150
IdAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
1
0.01 0.1 1 10
IG [A]
Fig. 7 Gate trigger characteristics
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCD225-16io1.PDF ] | |
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