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S1000NC36D Schematic ( PDF Datasheet ) - IXYS

Teilenummer S1000NC36D
Beschreibung Symmetrical Gate Turn-Off Thyristor
Hersteller IXYS
Logo IXYS Logo 




Gesamt 15 Seiten
S1000NC36D Datasheet, Funktion
WESTCODE
An IXYS Company
Date:- 3 Apr, 2007
Data Sheet Issue:- 1
Symmetrical Gate Turn-Off Thyristor
Type S1000NC30# to S1000NC36#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
3000-3600
3100-3700
100-3000
100-3000
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQM, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6)
Minimum permissible off-time, ITM=ITGQM, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDMVDRM, diGQ/dt=20A/µs, CS=2µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
0.3
600
1180
10.0
18.0
500×103
1000
200
8
140
18
130
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Types S1000NC30# to S1000NC36# Issue 1
Page 1 of 15
April, 2007






S1000NC36D Datasheet, Funktion
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor types S1000NC30# to S1000NC36#
2.5 Gate trigger characteristics.
These are measured by slowly ramping up the gate current and monitoring the transition of anode current
and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction
temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger voltage,
however, the curves of figure 1 give the range of gate forward characteristics, for the full allowable
junction temperature range. The curves of figures 1 & 6 should be used in conjunction, when considering
forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest
junction temperature start-up condition.
Feedback
R1
Current-
sence
CT
Gate-drive
DUT
0.9VAK
C1 Vs
0.1IA
Not to scale
Anode current
Gate current
IGT Anode-Cathode
Voltage
Diagram 7, Gate trigger circuit and waveforms.
2.6 Turn-on characteristics
The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a
circulating current in Tx, resulting in VD appearing across Cc/Lc. When the test device is fired Cc/Lc
discharges through DUT and commutates Tx off, as pulse from Cc/Lc decays the constant current source
continues to supply a fixed current to DUT. Changing value of Cc & Lc allows adjustment of ITM and di/dt
respectively, VD and i are also adjustable.
Cc Lc
R1
i Tx D
CT
Gate-drive
DUT
Cd Vd
Diagram 8, Turn-on test circuit of FT40.
The definitions of turn-on parameters used in the characteristic data are given in diagram 9. The gate
circuit conditions IGM & IG are fully adjustable, IGM duration 10µs.
diG/dt
IG
IGM
td tr
di/dt
VD
tgt
VD=VDM
ITM
Eon integral
period
Diagram 9, Turn-on wave-diagrams.
Data Sheet. Types S1000NC30# to S1000NC36# Issue 1
Page 6 of 15
April, 2007

6 Page









S1000NC36D pdf, datenblatt
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor types S1000NC30# to S1000NC36#
Figure 8 – Typical turn-on energy per pulse
(including snubber discharge)
2.5
S1000NC30#-36#
Issue 1
IGM=20A, diG/dt=10A/µs
Cs=2µF, Rs=5
2 VD=50%VDRM
Tj=25oC
400A/µs
300A/µs
1.5
200A/µs
Figure 9 – Maximum turn-on time
12
S1000NC30#-36#
Issue 1
VD=50%VDRM, ITGQ=1000A
tr of IGM 2µs
Tj=25oC
8
IGM=20A
IGM=40A
IGM=60A
1 100A/µs
4
0.5
0
0
250
500
750
1000
1250
Turn-On Current, ITM (A)
Figure 10 – Typical peak turn-off gate current
400 S1000NC30-36#
Issue 1
VD=80%VDRM
Tj=125oC
diGQ/dt=40A/µs
300 diGQ/dt=30A/µs
diGQ/dt=20A/µs
0
10 100 1000
Rate Of Rise Of On-State Current, di/dt (A/ µs)
Figure 11 – Maximum gate turn-off charge
5
S1000NC30#-36#
Issue 1
VD=80%VDRM
Tj=125oC
4 diGQ/dt=20A/µs
diGQ/dt=30A/µs
diGQ/dt=40A/µs
diGQ/dt=50A/µs
3
200
2
100 QGQ
1
0
0
250
500
750
1000
1250
Turn-Off Current, ITGQ (A)
0
0
250
500
750
1000
1250
Turn-Off Current, ITGQ (A)
Data Sheet. Types S1000NC30# to S1000NC36# Issue 1
Page 12 of 15
April, 2007

12 Page





SeitenGesamt 15 Seiten
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