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G1000LL250 Schematic ( PDF Datasheet ) - IXYS

Teilenummer G1000LL250
Beschreibung Anode-Shorted Gate Turn-Off Thyristor
Hersteller IXYS
Logo IXYS Logo 




Gesamt 13 Seiten
G1000LL250 Datasheet, Funktion
Date:- 18 Feb, 2004
Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor
Type G1000L#250
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VDC-link
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
Maximum continuous DC-link voltage.
MAXIMUM
LIMITS
2500
2500
18
1400
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Maximum turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
Operating temperature range.
Storage temperature range.
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=2µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
0.3
500
970
7.5
8.9
125x103
1000
160
8
100
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type G1000L#250 Issue 1
Page 1 of 13
February, 2004






G1000LL250 Datasheet, Funktion
WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
2.5 Gate trigger characteristics.
These are measured by slowly ramping up the gate current and monitoring the transition of anode current
and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction
temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger voltage,
however, the curves of figure 1 give the range of gate forward characteristics, for the full allowable
junction temperature range. The curves of figures 1 & 4 should be used in conjunction, when considering
forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest
junction temperature start-up condition.
Feedback
R1
Current-
sence
CT
Gate-drive
DUT
0.9VAK
C1 Vs
0.1IA
Not to scale
Anode current
Gate current
IGT Anode-Cathode
Voltage
Diagram 7, Gate trigger circuit and waveforms.
2.6 Turn-on characteristics
The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a
circulating current in Tx, resulting in VD appearing across Cc/Lc. When the test device is fired Cc/Lc
discharges through DUT and commutates Tx off, as pulse from Cc/Lc decays the constant current source
continues to supply a fixed current to DUT. Changing value of Cc & Lc allows adjustment of ITM and di/dt
respectively, VD and i are also adjustable.
Cc Lc
R1
i Tx D
CT
Gate-drive
DUT
Cd Vd
Diagram 8, Turn-on test circuit.
The definitions of turn-on parameters used in the characteristic data are given in diagram 10 on page 8.
The gate circuit conditions IGM & IG are fully adjustable, IGM duration 10µs.
The data in the curves of figure 5, gives the turn-on losses with snubber discharge, a snubber of the form
given in diagram 2 is assumed. Only typical losses are given due to the large number of variables which
effect Eon. It is unlikely that all negative aspects would appear in any one application, so typical figures can
be considered as worst case. Where the turn-on loss is higher than the figure given it will in most cases
be compensated by reduced turn-off losses, as variations in processing inversely effect many parameters.
For a worst case device, which would also have the lowest turn-off losses, Eon would be 1.5x values given
in the curves of figure 5. Turn-on losses are measured over the integral period specified below:-
10 µs
Eon = iv.dt
0
The turn-on loss can be sub-divided into two component parts, firstly that associated with tgt and secondly
the contribution of the voltage tail. For this series of devices tgt contributes 50% and the voltage tail 50%
(These figures are approximate and are influenced by several second order effects). The loss during tgt is
greatly affected by gate current and as with turn-on time, it can be reduced by increasing IGM. The turn-on
loss associated with the voltage tail is not effected by the gate conditions and can only be reduced by
limiting di/dt, where appropriate a turn-on snubber should be used. In applications where the snubber is
discharged through the GTO thyristor at turn-on, selection of discharge resistor will effect Eon. The curves
of figure 5 are given for a snubber as shown in diagram 2, with R=5, this is the lowest recommended
value giving the highest Eon, higher values will reduce Eon.
Data Sheet. Type G1000L#250 Issue 1
Page 6 of 13
February, 2004

6 Page









G1000LL250 pdf, datenblatt
WESTCODE An IXYS Company
Figure 9 – Transient thermal impedance
0.1
G1000L#250
Issue 1
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Double side cooled
0.01
0.001
0.001
0.01
Figure 10 – Maximum i2t and surge ratings
100000
G1000L#250
Issue 1
Tj (initial) = 125°C
0.1
Time, t (s)
10000
1 10
1.00E+07
I2t: VRRM 10V
I2t: 60% VRRM
1.00E+06
ITSM: VRRM 10V
ITSM: 60% VRRM
1000
1
3 5 10
Duration of surge (ms)
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
1.00E+05
Data Sheet. Type G1000L#250 Issue 1
Page 12 of 13
February, 2004

12 Page





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